FQI17P06TU技术资料参数原装现货仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQB17P06	文件：689.74 Kbytes Page：9 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD17P06	文件：682.2 Kbytes Page：9 Pages	60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD17P06	文件：1.44351 Mbytes Page：9 Pages	P-ChannelQFET짰MOSFET-60V,-12A,135m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD17P06	文件：892.15 Kbytes Page：9 Pages	P-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD17P06TF	文件：1.20347 Mbytes Page：8 Pages	N-ChannelQFET짰MOSFET100V,15.6A,100m廓	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD17P06TM	文件：1.44351 Mbytes Page：9 Pages	P-ChannelQFET짰MOSFET-60V,-12A,135m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD17P06TM	文件：912.3 Kbytes Page：4 Pages	P-channelEnhancementModePowerMOSFET Features VDS=-60V,ID=-20A RDS(ON)	BychipBYCHIP ELECTRONICS CO,. LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQI17P06	文件：689.74 Kbytes Page：9 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP17P06	文件：955.51 Kbytes Page：7 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQP17P06	文件：685.34 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF17P06	文件：675.62 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU17P06	文件：682.2 Kbytes Page：9 Pages	60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU17P06	文件：892.15 Kbytes Page：9 Pages	P-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU17P06	文件：1.44351 Mbytes Page：9 Pages	P-ChannelQFET짰MOSFET-60V,-12A,135m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU17P06	文件：973.08 Kbytes Page：7 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQU17P06	文件：371.6 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQU17P06TU	文件：1.44351 Mbytes Page：9 Pages	P-ChannelQFET짰MOSFET-60V,-12A,135m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
KSM17P06	文件：1.7784 Mbytes Page：6 Pages	60VP-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
KSMB17P06	文件：643.47 Kbytes Page：4 Pages	Greendeviceavailable.	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
KSMD17P06	文件：1.5945 Mbytes Page：8 Pages	60VP-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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详细参数

型号：
FQI17P06TU
功能描述：
MOSFET -60V Single
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市金华微盛电子有限公司	FQI17P06TU	FAIRCHILD	19+	TO-262	15000		询价
深圳市鹏和科技有限公司	FQI17P06TU	FSC	24+	TO-262	5000	只做原装公司现货	询价
瀚佳科技(深圳)有限公司	FQI17P06TU	FAIRCHILD	21+		35200	一级代理/放心采购	询价
深圳市百诺芯科技有限公司	FQI17P06TU	FAIRCHILD/仙童	23+	I2-PAKTO-262	24190	原装正品代理渠道价格优势	询价
深圳市百域芯科技有限公司	FQI17P06TU	FAIRCHILD/仙童	21+	I2-PAKTO-262	30000	优势供应实单必成可13点增值税	询价
深圳市航润创能电子集团有限公司	FQI17P06TU	FSC	21+	TO-262	11560	原装现货假一赔十	询价
深圳市国宇半导体科技有限公司	FQI17P06TU	FAIRCHILD仙童	23+	I2PAK	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	FQI17P06TU	Fairchild/ON	22+	TO2623 Long Leads I2Pak TO262A	9000	原厂渠道,现货配单	询价
深圳市威雅利发展有限公司	FQI17P06TU	FSC	0122+	TO-262	11560	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市瑞卓芯科技有限公司	FQI17P06TU	FAIRCHILD/仙童	22+	I2-PAKTO-262	18000	原装正品	询价

更多FQI17P06TU供应商更新时间2024-6-7 10:20:00

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