首页 >CEXPRESS-BW-N3710>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

IRF3710S

PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A)

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710SPBF

HEXFET짰PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A)

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710STRLPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710STRRPBF

HEXFET짰PowerMOSFET

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3710Z

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710ZGPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=18mΩ ID=59A Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimproved

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710ZL

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710ZL

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710ZL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3710ZLPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710ZPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710ZPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710ZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF3710ZS

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710ZS

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF3710ZSPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFI3710

HEXFETPowerMOSFET

Through-HolePackags TO-220FullPak(FullyIsolated)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFN3710

N?밅HANNELPOWERMOSFET

SEME-LAB

Seme LAB

供应商型号品牌批号封装库存备注价格
ADLINK Technology
23+
sop
10000
现货常备产品原装可到京北通宇商城查价格
询价
ADLINK
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
GOLDTRAI
21+ROHS
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MARCON
05+
原厂原装
3104
只做全新原装真实现货供应
询价
TI/德州仪器
22+
QFN
25000
只做原装,原装,假一罚十
询价
CET
24+25+/26+27+
DFN-贴片
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
CET(华瑞)
2112+
PR-PACK(5*6)
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
CET/華瑞
23+
PR-PACK(5*6)
22820
原装正品,支持实单
询价
CET-MOS
23+
NA
10
现货!就到京北通宇商城
询价
23+
N/A
78000
一级代理放心采购
询价
更多CEXPRESS-BW-N3710供应商 更新时间2024-6-4 15:00:00