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AOT4S60

isc N-Channel MOSFET Transistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT4S60

600V 4A aMOSTM Power Transistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT4S60

600V 4A a MOS TM Power Transistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT4S60

N-Channel 6 50V (D-S) Power MOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

4S60

Materialspecification

FERROXCUBEFERROXCUBE INC.

飞磁

AOB4S60

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOB4S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB4S60

600V4AaMOSPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB4S60

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB4S60L

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB4S60L

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOD4S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI4S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF4S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF4S60

600V4AaMOSPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF4S60

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU4S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOU4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

详细参数

  • 型号:

    AOT4S60

  • 制造商:

    SHENZHENFREESCALE

  • 制造商全称:

    ShenZhen FreesCale Electronics. Co., Ltd

  • 功能描述:

    600V 4A a MOS TM Power Transistor

供应商型号品牌批号封装库存备注价格
AOS/万代
2019+
TO220
6700
原厂渠道 可含税出货
询价
AOS/万代
24+
TO-220
333888
专业直销原装AOS一系列可订货
询价
AOS
TO-220
20000
原装正品
询价
VB
2019
TO-220AB
55000
绝对原装正品假一罚十!
询价
AOS万代
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
AOS万代
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价
AOS/万代
23+
TO-220
24190
原装正品代理渠道价格优势
询价
AOS/万代
21+
TO-220
330000
优势供应 实单必成 可13点增值税
询价
AOS/万代
TO-220
198589
假一罚十原包原标签常备现货!
询价
AOS/万代
23+
TO-220
10000
公司只做原装正品
询价
更多AOT4S60供应商 更新时间2024-5-29 16:04:00