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AOTF4S60

600V 4A a MOS Power Transistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF4S60

600V 4A a MOS TM Power Transistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF4S60

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

4S60

Materialspecification

FERROXCUBEFERROXCUBE INC.

飞磁

AOB4S60

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOB4S60

600V4AaMOSPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB4S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB4S60

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB4S60L

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB4S60L

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOD4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOD4S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOI4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI4S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT4S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT4S60

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT4S60

600V4AaMOSTMPowerTransistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT4S60

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOU4S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOU4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

详细参数

  • 型号:

    AOTF4S60

  • 功能描述:

    MOSFET N-CH 600V 4A TO220F

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    aMOS™

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
AOS/万代
24+
TO-220F
333888
只做原装 真实库存
询价
AOS
TO-220F
20000
原装正品
询价
Alpha&OmegaSemiconductor
2019+
TO-220-3FullPack
65500
原装正品货到付款,价格优势!
询价
AOS
2019
TO-220F-3
55000
原装正品现货假一赔十
询价
AOS/万代
23+
TO-220F
24190
原装正品代理渠道价格优势
询价
AOS/万代
21+
TO-220F
330000
优势供应 实单必成 可13点增值税
询价
AOS
1809+
TO220-3
3675
就找我吧!--邀您体验愉快问购元件!
询价
AOS(万代)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
A
23+
TO-220F
10000
公司只做原装正品
询价
AOS/万代
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多AOTF4S60供应商 更新时间2024-5-26 10:00:00