ZXTC6717MCTA中文资料美台半导体数据手册PDF规格书

特性 Features

NPN Transistor

• BVCEO > 15V

• IC = 4.5A Continuous Collector Current

• Low Saturation Voltage (100mV max @ 1A)

• RSAT = 45mΩ for a low equivalent On-Resistance

PNP Transistor

• BVCEO > -12V

• IC = -4A Continuous Collector Current

• Low Saturation Voltage (-140mV max @ -1A)

• RSAT = 60mΩ for a low equivalent On-Resistance

• hFE characterized up to 12A for high current gain hold up

• Low profile 0.8mm high package for thin applications

• RθJA efficient, 40 lower than SOT26

• 6mm2 footprint, 50 smaller than TSOP6 and SOT26

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

Applications

• DC – DC Converters

• Charging circuits

• Power switches

• Motor control

• LED Backlighting circuits

• Portable applications