ZXMS6004FFTA中文资料60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE DMN2027USS IntelliFET MOSFET数据手册Diodes规格书

描述 Description

The DIODES™ ZXMS6004FF is a self-protected low side IntelliFET™ MOSFET with logic level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

特性 Features

•Compact High Power Dissipation Package
•Low Input Current
•Logic Level Input (3.3V and 5V)
•Short Circuit Protection with Auto Restart
•Over Voltage Protection (Active Clamp)
•Thermal Shutdown with Auto Restart
•Overcurrent Protection
•Input Protection (ESD)
•High Continuous Current Rating
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony Free. “Green” Device (Note 3)
•For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
•This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/
•An Automotive-Compliant Part is Available Under Separate Datasheet (ZXMS6004FFQ)

应用 Application

• Especially suited for loads with a high in-rush current such as lamps and motors

• All types of resistive, inductive and capacitive loads in switching applications

• μC compatible power switches for 12V and 24V DC applications

• Automotive rated

• Replaces electromechanical relays and discrete circuits

• Linear mode capabilities – the current-limiting protection circuitry is designed to de-activate at low VDS to minimize on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS.