ZXGD3001E6中文资料12V, 9A, Gate Driver, SOT26数据手册Diodes规格书

描述 Description

The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate drivers capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation delay times down to 3ns and rise/fall times down to 11ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. The ZXGD3001E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.

应用 Application

Power MOSFET and IGBT Gate Driving in

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\t\tSynchronous switch-mode power supplies
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\t\tSecondary side synchronous rectification
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\t\tPlasma Display Panel power modules
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\t\t1, 2 and 3-phase motor control circuits
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\t\tAudio switching amplifier power output stages


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\t\t\t\tProduct Specifications

简介

ZXGD3001E6属于集成电路（IC）的栅极驱动器。由制造生产的ZXGD3001E6栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。