Dual N-Channel Power MOSFET

It combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). • Advance high cell density Trench technology\r\n• Low RDS(ON) to minimize conductive loss\r\n• Low Gate Charge for fast switching\r\n• Dual DIE in one package;

ZMJSEMI

真茂佳半导体

BERGSTIK II HEADER D/R 100/2.52cc STRAIGHT

文件：664.8 Kbytes 页数：8 Pages

FCI-CONNECTOR

BERGSTIK II HEADER D/R .100/2.54cc STRAIGHT

文件：679.33 Kbytes 页数：9 Pages

FCI-CONNECTOR

BERGSTIK II HEADER D/R .100/2.54cc STRAIGHT

文件：659.35 Kbytes 页数：8 Pages

FCI-CONNECTOR