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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
G350P02LLE	文件：890.23 Kbytes Page：6 Pages	P-ChannelEnhancementModePowerMOSFET Description TheG350P02LLEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
G350P02LLEA	文件：1.08936 Mbytes Page：6 Pages	P-ChannelEnhancementModePowerMOSFET Description TheG350P02LLEAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD

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功能描述/丝印

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G350P02LLE

文件：890.23 Kbytes

Page：6 Pages

P-ChannelEnhancementModePowerMOSFET

Description TheG350P02LLEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD

G350P02LLEA

文件：1.08936 Mbytes

Page：6 Pages

P-ChannelEnhancementModePowerMOSFET

Description TheG350P02LLEAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD

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