ZM027N03I中文资料30V N-Channel Power MOSFET数据手册ZMJSEMI规格书
ZM027N03I规格书详情
描述 Description
The ZM027N03I combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
特性 Features
• Advance high cell density Trench technology
• Low RDS(ON) to minimize conductive loss
• Low Gate Charge for fast switching
• Low Thermal resistance
应用 Application
• MB/VGA Vcore
• SMPS 2nd Synchronous Rectifier
• POL application
• BLDC Motor driver
技术参数
- 制造商编号
:ZM027N03I
- 生产厂家
:ZMJSEMI
- BVDSS
:30
- Channel
:N
- Vth(V)
:1.7
- Rds(on)@10V
:2.7
- Rds(on)@4.5V
:4.6
- ID(A)
:95
- Ciss
:2800