BZX284-C9V1

Marking：ZC；Package：SOD110；Voltage regulator diodes

FEATURES •Totalpowerdissipation:max.400mW •Twotoleranceseries:±2and±5 •Workingvoltagerange:nom.2.4to75V(E24range). APPLICATIONS •Generalregulationfunctions. DESCRIPTION Low-powervoltageregulatordiodesinaSOD110verysmallceramicSMDpackage.Thediodesareava

BZX284-C9V1

Marking：ZC；Package：SOD-110；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesinasmallceramicSMDSOD110package. ThediodesareavailableinthenormalizedE24±2(BZX284-B)and±5(BZX284-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V. FEATURES •Totalpowerdissipati

D12V0M1U2LP3-7

Marking：ZC；Package：X3-DFN0603-2；12V UNIDIRECTIONAL TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV 1ChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications CellularHand

FMMT4124

Marking：ZC；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ●NPNSiliconPlanar. ●SwitchingTransistor.

FMMT4124

Marking：ZC；Package：SOD-23；SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR

SOT23NPNSILICONPLANARSWITCHINGTRANSISTOR

KST4124

Marking：ZC；Package：SOD-23；General Purpose Transistor

GeneralPurposeTransistor

MMBT3904

Marking：ZC；Package：SOT-23；SMD General Purpose Transistor (NPN)

SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance

MMBT4124

Marking：ZC；Package：SOT-23；NPN General Purpose Amplifier

NPNGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

MMSZ4712

Marking：ZC；Package：SOD-123；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.4V–43VNominalZenerVoltage 5%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

PBSS4350T

Marking：ZC；Package：SOT23；50 V; 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability