BLF879P

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BLF879P

UHFpowerLDMOStransistor

BT879

Single-ChipVideoandBroadcastAudioCaptureforthePCIBus

CA879

Providesprecisionmeasurementwithitslasertargetfeature

FEATURES •Easyone-handoperation •Non-contactinfraredsensor •Laserguideforpreciseaim •12:1FieldofVisionRatio •Measurestemperaturein°Fand°C •Fixed0.95emissivity •Auto-HOLDfunction •2000-countbacklitLCD APPLICATIONS •Electricaltroubleshooting •Foodsafe

CU-879

UTILITYCABINET

D879

1.5V,3VStrobeApplications

·InapplicationswheretwoNiCdbatteriesareusedtoprovide2.4V,two2SD879sareused. ·Thechargetimeisapproximately1secondfasterthanthatofgermaniumtransistors. ·LesspowerdissipationbecauseoflowCollector-toEmitterVoltageVCE(sat),permittingmoreflashesof

DAO879

PINDiode1SectionAttenuator

FEATURES •800-1200MHz •50dBAttenuator •0.9dBInsertionLoss •ConstantPhase •TTLControl •Small8Pin0.5Sq.Package

HA-A879-FREQ

PositiveECL(PECL)

Description TheHA-A870SeriesofquartzcrystaloscillatorsprovideMECL10Kand10KHseriescompatiblesignalsin industrystandardfourpinDIPhermeticpackage.Systemsdesignersmaynowspecifyspace-saving,cost effectivepackagedPECLoscillatorstomeettheirtimingrequirements.

HM879

SILICONPNPEPITAXIALTYPETRANSISTOR

FEATURES ●Charger-uptimeisabout1mSfaster Thanofagermaniumtransistor. ●Smallsaturationvoltagecanbringdissipation Andflasingtimes.

HM879

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCurrent ●LowVoltage ●GeneralPurposeAmplifierApplications