isc N-Channel MOSFET Transistor

文件：342.7 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 85mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：391.79 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra Bright GaAIAs Lamps

文件：29.92 Kbytes 页数：1 Pages

PANASONIC

松下

Ultra Bright GaAIAs Lamps

文件：29.92 Kbytes 页数：1 Pages

PANASONIC

松下

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

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NTE