MOS场效应管

Yenji

元基电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 12A, RDS(ON) = 100mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant RDS(ON) = 140mW @VGS = 6V.

文件：925.83 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 12A, RDS(ON) = 100mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant RDS(ON) = 140mW @VGS = 6V.

文件：925.83 Kbytes 页数：5 Pages

CET-MOS

华瑞

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 14.6mΩ ID 62A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：230.02 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技