丝印：7N60AMJ；Package：TO-251；7A 600V N-channel enhanced field effect transistor

文件：1.06531 Mbytes 页数：7 Pages

YFWDIODE

佑风微

600V, SMPS Series N-Channel IGBT

文件：191.58 Kbytes 页数：8 Pages

Fairchild

仙童半导体

600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

文件：204.5 Kbytes 页数：8 Pages

Fairchild

仙童半导体

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

文件：168.06 Kbytes 页数：11 Pages

Intersil