XX1010-QT中文资料Doubler数据手册MACOM规格书

描述 Description

The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz GaAs MMIC doubler that integrates a gain stage, passive doubler and driver amplifier onto a single device. This device has a self-biased architecture requiring a single positive supply (+4.5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components. This device uses InGaAs pHEMT device technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XX1010-QT has integrated ESD structures for protection and comes in a low cost 3 mm QFN package. The device is well suited for millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

特性 Features

·Integrated Gain, Doubler and Driver Stages
·RoHS* Compliant
·260°C Reflow Compatible
·Lead-Free 3 mm 16-Lead QFN Package
·100% RF, DC and Output Power Testing
·On-Chip ESD Protection
·30 dBc Fundamental Suppression
·+20 dBm Output Saturated Power
·Integrated Bypassing Capacitor
·+4.5 V Single Positive Bias

应用 Application

·Wireless Networking and Communication