XX1001-BD-000V中文资料MIMIX数据手册PDF规格书

General Description

Mimix Broadbands 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier. The device provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

特性 Features

• Integrated Doubler and Power Amplifier

• Excellent Saturated Output Stage

• +26.0 dBm Output Power

• 50.0 dBc Fundamental Suppression

• 100 On-Wafer RF, DC and Output Power Testing

• 100 Visual Inspection to MIL-STD-883 Method 2010