TLVx365 50-MHz, Zerø-Crossover, High-CMRR, RRIO Operational Amplifiers

1 Features • Gain bandwidth: 50 MHz • Zerø-crossover distortion topology: – CMRR: 115 dB (typical) – Rail-to-rail input and output • Input 100 mV beyond supply rail • Noise: 4.5 nV/√Hz • Slew rate: 27 V/μs • Fast settling: 0.2 μs to 0.01 • Precision: – Offset drift: 2 μV/°C (maximum) –

文件：2.30282 Mbytes 页数：34 Pages

TI

德州仪器

TLVx365 50-MHz, Zerø-Crossover, High-CMRR, RRIO Operational Amplifiers

1 Features • Gain bandwidth: 50 MHz • Zerø-crossover distortion topology: – CMRR: 115 dB (typical) – Rail-to-rail input and output • Input 100 mV beyond supply rail • Noise: 4.5 nV/√Hz • Slew rate: 27 V/μs • Fast settling: 0.2 μs to 0.01 • Precision: – Offset drift: 2 μV/°C (maximum) –

文件：2.056679 Mbytes 页数：31 Pages

TI

德州仪器

Silicon NPN Transistor High Voltage Horizontal Deflection Output

Silicon NPN Transistor / High Voltage Horizontal Deflection Output

文件：22.2 Kbytes 页数：2 Pages

NTE

3V LOW NOISE AMPLIFIER

Product Description The RF2365 is a low noise amplifier with a high dynamic range designed for the receive front end of digital cellular applications at PCS/DCS frequencies. It is designed to amplify low level signals with minimum noise contribution while operating in the harsh, interference-rich

文件：135.07 Kbytes 页数：8 Pages

RFMD

威讯联合

3V LOW NOISE AMPLIFIER

Product Description The RF2365 is a low noise amplifier with a high dynamic range designed for the receive front end of digital cellular applications at PCS/DCS frequencies. It is designed to amplify low level signals with minimum noise contribution while operating in the harsh, interference-rich

文件：135.07 Kbytes 页数：8 Pages

RFMD

威讯联合