首页 >XSIL248B-LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1/2(12.7mm)ConductivePlastic&CermetPotentiometers | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
1/2(12.7mm)ConductivePlasticandCermetPotentiometers FEATURES •Model248:0.5Wat70°C(conductiveplastic element) •Model249:1Wat70°C(cermetelement) •Costeffectivepanelpotentiometer •PCBmounting •TestsaccordingtoCECC41000orIEC60393-1 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCMV,HighPerformanceIsolationAmplifiers | INTRONICS Intronics Power, Inc. | INTRONICS | ||
ElectrostaticDischargePrevention-InputProtection | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
VHFPOWERMOSFET DESCRIPTION: TheASIBLF248isaBalancedN-ChannelEnhancement-ModeRFPowerMOSFETDesignedforAM andFMPowerAmplifierApplicationsupto250MHz. FEATURESINCLUDE: •PG=11dBTypicalat225MHz •5:1LoadVSWRCapability •Omnigold™metalizationsystem | ASI Advanced Semiconductor | ASI | ||
VHFpush-pullpowerMOStransistor DESCRIPTION Dualpush-pullsiliconN-channelenhancementmodeverticalD-MOStransistor,designedforlargesignalamplifierapplicationsintheVHFfrequencyrange. Thetransistorisencapsulatedina4-leadSOT262A1balancedflangeenvelope,withtwoceramiccaps.Themountingflangeprovides | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
VHFpush-pullpowerMOStransistor DESCRIPTION Dualpush-pullsiliconN-channelenhancementmodeverticalD-MOStransistor,designedforlargesignalamplifierapplicationsintheVHFfrequencyrange. Thetransistorisencapsulatedina4-leadSOT262A1balancedflangepackage,withtwoceramiccaps.Themountingflangeprovides | ELEFLOW eleflow technologies co., ltd. | ELEFLOW | ||
GuardsagainstaccidentaldisconnectionofComputers,PDU’s,ServersandmostNetworkDevices. | BURLAND Burland Technology Solutions | BURLAND | ||
10GHzBandpassFilter | APITECH API Technologies Corp | APITECH | ||
DATASUBJECTTOCHANGEWITHOUTNOTLCE | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND |
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