XR40N10

100V N-Ch MOSFET;

40N10

N-Channel100-V(D-S)MOSFET

40N10

FastSwitching

FEATURES •DrainCurrentID=40A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max) •FastSwitching APPLICATIONS •Switchingpowersupplies,converters,ACandDCmotorcontrols

40N10

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

40N10B

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

40N10F

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

40N10H

40Amps,100VoltsN-CHANNELMOSFET

FEATURE ●40A,100V,RDS(ON)=40mΩ@VGS=10V/20A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CED40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,37A,RDS(ON)=32mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,37A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CEU40N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,37A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.