N-CHANNEL ENHANCEMENT MODE POWER MOSFET

100% Rg & UIS Test Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free Description XP6N100 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer

文件：164.48 Kbytes 页数：8 Pages

YAGEO

国巨

Power MOSFETs

Features ● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications ● DC-DC converters ● Switch

文件：820.74 Kbytes 页数：4 Pages

IXYS

艾赛斯

6A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 页数：9 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：73.99 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子