DUAL N-CHANNEL ENHANCEMENT

Description XP3A010A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely pre

文件：209.78 Kbytes 页数：7 Pages

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DUAL N-CHANNEL ENHANCEMENT

Description XP3A010A series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for

文件：671.51 Kbytes 页数：7 Pages

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DUAL N-CHANNEL ENHANCEMENT

Description XP3A010B series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is spec

文件：777.15 Kbytes 页数：8 Pages

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DUAL N-CHANNEL ENHANCEMENT

Description XP3A010 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for

文件：672.35 Kbytes 页数：7 Pages

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DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A020A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an

文件：848.4 Kbytes 页数：8 Pages

YAGEO

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DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an e

文件：209.65 Kbytes 页数：7 Pages

YAGEO

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DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an e

文件：203.69 Kbytes 页数：7 Pages

YAGEO

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DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an e

文件：695.93 Kbytes 页数：7 Pages

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DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS Compliant & Halogen-Free Description XP3A035E series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an

文件：210 Kbytes 页数：7 Pages

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DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Low Gate Charge Fast Switching Characteristic Simple Drive Requirement RoHS Compliant & Halogen-Free Description XP3B020 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an

文件：216.08 Kbytes 页数：8 Pages

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