XP1027-BD数据手册MACOM中文资料规格书

描述 Description

MACOM’s three stage 27.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35.5 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

特性 Features

·Ka-Band 4 W Power Amplifier
·RoHS* Compliant and
·100% Visual Inspection to MIL-STD-883 Method 2010
·100% On-Wafer RF, DC and Output Power Testing
·+43.0 dBm Output Third Order Intercept (OIP3)
·+35.5 dBm Saturated Output Power
·21.0 dB Small Signal Gain
·Balanced Design Provides Good Input/Output Match
·260°C Reflow Compatible

应用 Application

·Wireless Networking and Communication