XP1019-BD中文资料Power Amplifier数据手册MACOM规格书

描述 Description

MACOM's three stage 17.0-24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

特性 Features

·Excellent Transmit Output Stage
·100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
·100% On-Wafer RF, DC and Output Power Testing
·+27.0 dBm P1dB Compression Point
·18.0 dB Small Signal Gain
·Temperature Compensated Output Detector

应用 Application

·ISM
·Wireless Networking and Communication