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MBR360T3

SurfaceMountSchottkyPowerRectifier

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MBRAF360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRAF360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS360T3

SCHOTTKYBARRIERRECTIFIERS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRS360T3G

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS360T3

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MURS360T3

ULTRAFASTRECTIFIERS3.0AMPERES200-600VOLTS

SurfaceMountUltrafastPowerRectifiers ...employingstate–of–the–artepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforhighvoltage,highfrequencyrectification,orasfreewheelingandprotectiondiodes,insurfacemountapplicationswherecompact

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

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