首页 >XNRVBS360T3G>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SurfaceMountSchottkyPowerRectifier SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountUltrafastPowerRectifiers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ULTRAFASTRECTIFIERS3.0AMPERES200-600VOLTS SurfaceMountUltrafastPowerRectifiers ...employingstate–of–the–artepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforhighvoltage,highfrequencyrectification,orasfreewheelingandprotectiondiodes,insurfacemountapplicationswherecompact | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola |
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