首页 >XNRVBS3200T3G>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SurfaceMountSchottkyPowerRectifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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