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MBRAF1540T3G	文件：169.34 Kbytes Page：6 Pages	SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRAF1540T3G	文件：68.92 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRAF1540T3G	文件：109.27 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRS1540T3	文件：70.76 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifierSMBPowerSurfaceMountPackage	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRS1540T3	文件：140.81 Kbytes Page：4 Pages	SurfaceMountSchottkyPowerRectifier	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司	Motorola
MBRS1540T3	文件：150.3 Kbytes Page：6 Pages	SurfaceMountSchottkyPowerRectifierSMBPowerSurfaceMountPackage ThesedevicesemploytheSchottkyBarrierprincipleina metal−to−siliconpowerrectifier.Featuresepitaxialconstructionwith oxidepassivationandmetaloverlaycontact.Ideallysuitedforlow voltage,highfrequencyswitchingpowersupplies;freewheeling diodesandpolarityprotectiondio	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRS1540T3G	文件：150.3 Kbytes Page：6 Pages	SurfaceMountSchottkyPowerRectifierSMBPowerSurfaceMountPackage ThesedevicesemploytheSchottkyBarrierprincipleina metal−to−siliconpowerrectifier.Featuresepitaxialconstructionwith oxidepassivationandmetaloverlaycontact.Ideallysuitedforlow voltage,highfrequencyswitchingpowersupplies;freewheeling diodesandpolarityprotectiondio	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MBRS1540T3G	文件：70.76 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifierSMBPowerSurfaceMountPackage	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NRVBAF1540T3G	文件：169.34 Kbytes Page：6 Pages	SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NRVBAF1540T3G	文件：68.92 Kbytes Page：5 Pages	SurfaceMountSchottkyPowerRectifier	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI

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