1.5 A, 40 V Schottky Rectifier

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity • Low Profile Package for Space Constrained Applications\n• Rectangular Package for Automated Handling\n• 150°C Operating Junction Temperature\n• These are Pb-Free and Halide-Free DevicesMechanical Characteristics:\n• Weight: 95 mg (approximately)\n• Lead and Mounting Surface Temperature for Solderi;

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