首页 >XNF15N60T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
15Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC15N60isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecostumerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypu | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
15A,600VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
HighSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
15A,600VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC15N60-MTisahighvoltageandhighcurrentpower MOSFET,designedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceandahigh ruggedavalanchecharacteristics.ThispowerMOSFETisusually usedathighspeedswitching | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
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