5 Volt, Byte Alterable E2PROM

DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K

文件：76.57 Kbytes 页数：17 Pages

XICOR

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K

文件：76.57 Kbytes 页数：17 Pages

XICOR

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K

文件：76.57 Kbytes 页数：17 Pages

XICOR

Xicor Inc.

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

文件：25 Kbytes 页数：4 Pages

XICOR

Xicor Inc.