XM28C010PM-12中文资料XICOR数据手册PDF规格书

DESCRIPTION

The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array.

FEATURES

• High Speed, High Density Memory Module

—150ns, 120ns, 90ns and 70ns Access Times Available

—1 Megabit Memory in 1 square inch.

• Flexible Multiplane Architecture

—Four Separate Chip Selects

—32 Separate I/Os

• User Configurable I/Os—x8, x16, or x32

• User Configurable Page Size—64 Double words, 128 Words, or 256 Bytes

—Concurrent Read/Write Operations

• Able to Continue Reading During a Nonvolatile Write Cycle.

• 5 Volt Byte or Page Alterable

—No Erase Before Write

• Software Data Protection

• Early End of Write Polling

—DATA Polling

—Toggle Bit Polling

• High Reliability

—Endurance: 100,000 Cycles

—Data Retention: 100 Years