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型号	下载订购	功能描述	制造商上传企业	LOGO
XM28C010P	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor
XM28C010P-12	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor
XM28C010P-15	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor
XM28C010P-20	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor
XM28C010P-70	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor
XM28C010P-90	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor
XM28C010PI-12	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor
XM28C010PI-15	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor
XM28C010PI-20	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor
XM28C010PI-70	文件：25.58 Kbytes Page：3 Pages	High Speed 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C010P is a high speed, high density CMOS byte alterable nonvolatile memory array constructed on a co-fired ceramic substrate using Xicor’s High Speed 32K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Speed, 文件：25.58 Kbytes 页数：3 Pages	Xicor Xicor Inc.	Xicor

详细参数

型号：
XM28C010P
制造商：
XICOR
制造商全称：
Xicor Inc.
功能描述：
High Speed 5 Volt Byte Alterable Nonvolatile Memory Array

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛尔通科技有限公司	XM28C020MHR-20	XIC	23+		65480		询价
深圳市达恩科技有限公司	XM28C040M-20	XICOR	24+		200	进口原装正品优势供应	询价
深圳市毅创弘电子科技有限公司	XM28C040M-20	XICOR	24+		66800	原厂授权一级代理,专注汽车、医疗、工业、新能源！	询价
深圳市莱克讯科技有限公司	XM28C040M-20	AD		DIP	2230	只做进口原装!假一赔百!自己库存价优!	询价
贸泽芯城（深圳）电子科技有限公司	XM28C040M-20	XICOR	23+	CDIP32	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市赛特兴科技有限公司	XM28C040M-20	XICOR	QQ咨询	189-8877-7135	105	全新原装研究所指定供货商	询价
深圳市益百分电子有限公司	XM28C040M-20	xilinx	22+	CDIP32	6800		询价
深圳市源铭芯科技有限公司	XM28C040M-20	xilinx	23+	CDIP32	8000	全新原装	询价
深圳市华来深电子有限公司	XM28C040MHR-20	XICOR	23+	CDIP32	8650	受权代理!全新原装现货特价热卖!	询价
深圳市纳艾斯科技有限公司	XM28C040MHR-20	XICOR	24+	CDIP32	600	只做自己库存全新原装进口正品假一赔百可开13%增	询价

更多XM28C010P供应商更新时间2025-10-7 9:21:00

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