丝印：XLMG3425R050G10D21；Package：VQFN；LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 3.6-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and

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