XLF6G20LS-110资料datasheet下载市场行情-114ic电子网

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BLC6G20LS-110	文件：52.29 Kbytes Page：9 Pages	UHFpowerLDMOStransistor Generaldescription 110WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom1800MHzto2000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof1930MHzand1990MHz,a supplyvoltageof28VandanIDqof950mA: ◆Outputpower=25W(AV)	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BLF6G20LS-110	文件：74.57 Kbytes Page：9 Pages	PowerLDMOStransistor Generaldescription 110WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom1800MHzto2000MHz. Features ■Typical2-carrierW-CDMAperformanceatfrequenciesof1930MHzand1990MHz,asupplyvoltageof28VandanIDqof900mA: ◆Averageoutputpower=25W	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF6G20LS-110	文件：90.21 Kbytes Page：10 Pages	PowerLDMOStransistor	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF6G20LS-110	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp

更多XLF6G20LS-110供应商更新时间2024-5-23 10:31:00