SOP8,P管，-5A,-30V,MOSFET

XFSEMI

先丰半导体

20V P-Channel Increased MOS FET

文件：299.94 Kbytes 页数：2 Pages

FUMAN

富满微

P-Channel 30-V (D-S) MOSFET

文件：972.94 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

文件：1.21295 Mbytes 页数：5 Pages

HOTTECH

合科泰