XE5690SM

Compact, Low-Cost Global Embedded Modem

[Xecom] Description TheXE900S-500combinesaspreadspectrumtransceiverandmicro-controllerinasingle,easy-to-use,FCCPart15Registeredmodule.TheembeddedcommunicationscontrollermanagestheFrequencyHoppingSpreadSpectrum(FHSS)linkandthehostsysteminterface. Features *Sma

5690

BoardtoBoardConnector

5690

SB®175ConnectorsUpto280Amps

Wiressizesfrom10to1/0AWG(5.3to50mm²)fitin thesecondtolargestconnectorintheSB®series.The 3poleSB®175addsanadditionalpositionforpower orgrounding.AllMultipolewireconnectorhousings aregenderlessandmatetothemselvesminimizing inventoryandassemblycomplex

5690-BK

SB®175ConnectorsUpto280Amps

Wiressizesfrom10to1/0AWG(5.3to50mm²)fitin thesecondtolargestconnectorintheSB®series.The 3poleSB®175addsanadditionalpositionforpower orgrounding.AllMultipolewireconnectorhousings aregenderlessandmatetothemselvesminimizing inventoryandassemblycomplex

5690F

DualMountedT-1Multi-PositionLEDArrays

BCM5690

SCALABLE12-PORTGIGABITETHERNETMULTILAYERSWITCH

BCM5690

AScalableApproachtoGigabitEthernetSwitchDesign

FDB5690

60VN-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(o

FDB5690

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=27mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FDD5690

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=30A@TC=25℃ DrainSourceVoltage-VDSS=60V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD5690

60VN-ChannelPowerTrench??MOSFET

60VN-ChannelPowerTrench®MOSFET

FDD5690

60VN-ChannelPowerTrench짰MOSFET

FDP5690

60VN-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(o

FDS5690

60VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •7A,60V.RDS(on)=0.028Ω@VGS=10VRDS(on)=0.0

KDB5690

N-ChannelPowerTrenchTMMOSFET

Features ●32A,60V.RDS(ON)=0.027Ω@VGS=10V RDS(ON)=0.032Ω@VGS=6V ●CriticalDCelectricalparametersspecifiedat elevatedtemperature. ●Ruggedinternalsource-draindiodecaneliminatethe needforanexternalZenerdiodetransientsuppressor.

LA5690D

VoltageRegulatorDriverwithWatchdogTimer

Overview TheLA5690isasingle-chipvoltageregulatorformicrocomputersystemmonitorusethatperformsthefunctionsof5Voutputvoltagecontrol,watchdogtimer,andvoltagedetector.TheLA5690usesaminimumnumberofpartstoprovidethebasicfunctions. Features •AnexternalPNPtransi

LA5690S

VoltageRegulatorDriverwithWatchdogTimer

Overview TheLA5690isasingle-chipvoltageregulatorformicrocomputersystemmonitorusethatperformsthefunctionsof5Voutputvoltagecontrol,watchdogtimer,andvoltagedetector.TheLA5690usesaminimumnumberofpartstoprovidethebasicfunctions. Features •AnexternalPNPtransi

NIPXI-5690

PXIRFSignalConditioning

OV5690

OV56905-megapixelproductbrief

VTU5690A

PulsedCoupledCavityTWT