XD1001-BD中文资料Distributed Amplifier数据手册MACOM规格书

描述 Description

MACOM’s 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave and wideband military applications.

特性 Features

·Ultra Wide Band Driver Amplifier
·RoHS* Compliant
·260°C Reflow Compatible
·100% Visual Inspection to MIL-STD-883 Method 2010
·100% On-Wafer RF, DC and Output Power Testing
·+15.0 dBm P1dB Compression Point
·30 dB Gain Control
·5.0 dB Noise Figure
·17.0 dB Small Signal Gain
·Fiber Optic Modulator Driver

应用 Application

·Aerospace and Defense
·ISM