首页 >XCDAISY-CG717>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DUALPNPMEDIUMPOWERHIGHGAINTRANSISTORS SM-8DUALPNPMEDIUMPOWERHIGHGAINTRANSISTORS | Zetex Zetex Semiconductors | Zetex | ||
CERAMICRESONATORS ZTBSERIES700kHzto999kHz | EUROQUARTZEUROQUARTZ limited 石英公司欧洲石英公司 | EUROQUARTZ | ||
Super323횚SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR Features •BVCEO>-12V •IC=-1.25AContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *500mWPOWERDISSIPATION *ICCONT1.5A *3APeakPulseCurrent *ExcellentHFECharacteristicsUpTo3A(pulsed) *ExtremelyLowSaturationVoltage *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *NegativeboostfunctionsinDC-DCconverters *Supplylineswitc | Zetex Zetex Semiconductors | Zetex | ||
DUAL12VPNPLOWSATURATIONTRANSISTORS | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUAL12VPNPLOWSATURATIONTRANSISTORS | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
12VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-140mVmax@-1A) •RSAT=60mΩforalowequivalentOn-Resistance •hFEspecifiedupto-10Aforahighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
12VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-140mVmax@-1A) •RSAT=60mΩforalowequivalentOn-Resistance •hFEspecifiedupto-10Aforahighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
12VPNPLOWSATURATIONTRANSISTORAND FeaturesandBenefits PNPTransistor •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-140mVmax@-1A) •RSAT=65mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-10Aforhighcurrentgainholdup SchottkyDiode •BVR>40V | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
12VPNPLOWSATURATIONTRANSISTORAND FeaturesandBenefits PNPTransistor •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-140mVmax@-1A) •RSAT=65mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-10Aforhighcurrentgainholdup SchottkyDiode •BVR>40V | DIODESDiodes Incorporated 美台半导体 | DIODES |
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