首页 >XBL6042JS-SM>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SINGLEPOLE,SINGLETHROWCONNECTORIZEDSWITCHES | MICRONETICSMicronetics, Inc. Micronetics, Inc. | MICRONETICS | ||
ExtraLargeAlligatorClipWith4mmSheathSafetyJack | POMONA Pomona Electronics | POMONA | ||
Component112X1PAIR | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
SiliconMonolithicIntegratedCircuit | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
OPERATIONINSTRUCTION | COREBAICoreBai Microelectronics 芯佰芯佰微电子(北京)有限公司 | COREBAI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,118A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,90A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,118A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,118A,RDS(ON)=5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,90A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedSGTtechnology Description： ThisN-ChannelMOSFETusesadvancedSGTtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=60V,ID=130A,RDS(ON) | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
13-16GHzHighPowerAmplifier Description TheCHA6042isafour-stagepHEMTHPAMMICdesignedforVSATgroundterminalsandotherradioapplications.TheCHA6042provides32dBmnominaloutputpowerat1dBgaincompressionoverthe13-16GHzfrequencyrange,and32dBsmall-signalgain.Thisproductwillbeavailableinchipf | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
60V175째CN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V175째CN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V175째CN-CHANNELENHANCEMENTMODEMOSFETPOWERDI | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V175°CN-CHANNELENHANCEMENTMODEMOSFETPOWERDI Features Ratedto+175°C–IdealforHighAmbientTemperature Environments 100UnclampedInductiveSwitching–EnsuresMoreReliable andRobustEndApplication LowRDS(ON)–MinimizesPowerLosses LowQg–MinimizesSwitchingLosses Lead-FreeFinish;RoHSCompliant(Notes1&2) Halogenan | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUALN-CHANNEL175CMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUALN-CHANNELMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Thick-FilmHybridICUnipolarFixed-CurrentChopper(Self-ExcitedPWM)SchemeandBuilt-inPhaseSignalDistributionICTwo-PhaseSteppingMotorDriver(SquareWaveDrive)OutputCurrent2.4A Overview TheSTK672-120-Eisaunipolarfixed-currentchoppertype2-phasesteppingmotordriverhybridIC.ItfeaturespowerMOSFETsintheoutputstageandabuilt-inphasesignaldistributionIC.TheincorporationofaphasedistributionICallowstheSTK672-120-Etocontrolthespeedofthe | SANYOSanyo 三洋三洋电机株式会社 | SANYO |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XYSEMI赛芯微 |
24+ |
DFN |
600000 |
XYSEMI赛芯微-单节锂电保护产品 |
询价 | ||
xysemi(赛芯微) |
23+ |
DFN4(1x1) |
6000 |
诚信服务，绝对原装原盘 |
询价 | ||
23+ |
N/A |
56800 |
一级代理放心采购 |
询价 | |||
只做原装 |
21+ |
BGA |
36520 |
一级代理/放心采购 |
询价 | ||
TI/德州仪器 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TI |
21+ |
BGA |
10000 |
原装现货假一罚十 |
询价 | ||
TI |
08+40 |
157 |
公司优势库存 热卖中! |
询价 | |||
TI德洲仪器 |
24+23+ |
BGA |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
原厂 |
N/A |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
TI/德州仪器 |
23+ |
NA/ |
7000 |
原装现货,当天可交货,原型号开票 |
询价 |
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