高性能低成本10G ONU解决方案

XB1110C是为10G ONU市场量身定制的低成本跨阻放大器解决方案。XB1110C有如下优势： 1, 高达-33dBm的超高灵敏度（高低温劣化约0.5dB） 2, 极为优异的抗WIFI干扰能力 3, 极致的低成本 4, 可适配市面上几乎全部3G —10G APD 5, 集成电子色散补偿电路，长距传输（80~100Km）可实现非凡的抗TDP性能 配合市面上常用的10G APD，XB1110C在室温下可达到-33dBm ~ -34dBm的超高灵敏度，高低温劣化仅约0.5dB，且有很宽的无误码区间： 由于集成了自适应频率均衡电路，XB1110C可配合从2.5G~10G的不同APD使用。配合低速

Sibroad

芯波微

Silicon PNP epitaxial planer transistor

For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UN1110 × 2 elements

文件：33.5 Kbytes 页数：2 Pages

Panasonic

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

文件：33.03 Kbytes 页数：2 Pages

Panasonic

松下

SILICON ZENER DIODES

VZ : 3.3 - 200 Volts PD : 1 Watt FEATURES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

文件：27.96 Kbytes 页数：2 Pages

EIC