BZX84B51

Marking：XA；Package：SOT-23；350mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 350mWPowerDissipation 2.4V–51VNominalZenerVoltage 2StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZX84C51

Marking：XA；Package：SOT-23；350mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 350mWPowerDissipation 2.4V–51VNominalZenerVoltage 5%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZX84C51-AU

Marking：XA；Package：SOT-23；SURFACE MOUNT SILICON ZENER DIODES

SURFACEMOUNTSILICONZENERDIODES VOLTAGE2.4to75VoltsPOWER410mWatts FEATURES •PlanarDieconstruction •410mWPowerDissipation •ZenerVoltagesfrom2.4~75V •IdeallySuitedforAutomatedAssemblyProcesses •Acqirequalitysystemcertificate:TS16949 •AEC-Q10

BZX84C51W

Marking：XA；Package：SOT-323；200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.4V–51VNominalZenerVoltage 5%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZX99-C4V7

Marking：XA；Package：SOT-23；Voltage regulator diodes

DESCRIPTION Low-powerlownoisevoltageregulatordiodesinsmallSOT23plasticSMDpackages. ThediodesareavailableinthenormalizedE24±5tolerancerange.Theseriesconsistsof20typeswithnominalworkingvoltagesfrom2.4to15V. FEATURES •Totalpowerdissipation:max.300mW •To

CPDVR103V3U-HF

Marking：Xa；Package：DFN2510-10L；SMD ESD Protection Diode

Features -Ultra-lowcapacitance. -IEC61000-4-2(Air):±15kV IEC61000-4-2(Contact):±15kV IEC61000-4-5(Surge):6A(8/20μs)

SMAJ19C

Marking：XA；Package：DO-214AC；3.3 To 440V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan1μAabove10V 400WPeakpowercapabilityat10×1000μswaveformRepetition rate(d

SMAJ20C

Marking：XA；Package：DO-214AC；Transient Voltage Suppressors

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha 10/1000uswaveform,repetitiverate(duty cycle):0.01 Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponsetime RoHScompliant

TDTC143E

Marking：XA；Package：SOT23；Bipolar Transistors Silicon NPN Epitaxial Type

1.Applications •Switching •InverterCircuits •DriverCircuits 2.Features (1)Theintegratedbiasresistorreducesthenumberofexternalpartsrequired,makingitpossibletoreduce systemsizeandassemblytime. (2)Toshibaofferstransistorswithawiderangeofresistancetoaccom

BD46322

Marking：XA；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC