首页 >X4430DCBSR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DoubleCoatedFoamTape | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
192kHz24-BitStereo?誇DACwith2VrmsOutput | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
192kHz24-BitStereo?誇DACwith2VrmsOutput | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
192kHz24-BitStereo | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
192kHz24-BitStereo?誇DACwith2VrmsOutput | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
AK4430EvaluationBoardRev.1 | AKMAKM Semiconductor Inc. 旭化成微电子旭化成微电子株式会社 | AKM | ||
N-Channel30-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
DesigninganNFCAndroidApplicationforM24SRandM24LRdevices | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4430/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. AO4430andAO4430 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=18A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4430/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. AO4430andAO4430 | WHXPCBshenzhen wanhexing Electronics Co.,Ltd 万和兴电子深圳万和兴电子有限公司 | WHXPCB | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=18A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4430/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgateresistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. AO4430andAO4430 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
SimpleDriveRequirement,FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
Ultra_LowOn-resistance,SimpleDriveRequirement | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET Features •30V/12.5A, RDS(ON)=4.5mΩ(typ.)@VGS=10V RDS(ON)=7mΩ(typ.)@VGS=5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryP | ANPECAnpec Electronics Corp 茂达电子 | ANPEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
20+ |
BGA |
5000 |
原装正品 |
询价 | ||
TI/德州仪器 |
BGA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
TI |
TSOP |
3000 |
原厂旗下一级分销商!原装正品现货!假一罚十! |
询价 | |||
TI |
1114+ |
BGA547 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
TI/德州仪器 |
21+ |
BGA |
20000 |
只做正品原装现货 |
询价 | ||
TI/德州仪器 |
21+ |
BGA |
101 |
原装现货假一赔十 |
询价 | ||
TI/德州仪器 |
21+ |
BGA |
5000 |
全新原装现货 价格优势 |
询价 | ||
TI/德州仪器 |
21+ |
BGA |
6000 |
原装正品 |
询价 | ||
TI/德州仪器 |
23+ |
BGA |
10000 |
公司只做原装正品 |
询价 | ||
TI/德州仪器 |
1101+ |
BGA |
101 |
原装/现货 |
询价 |
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