型号：BAS21W；Package：SC-70；High-voltage switching diode

1. General description High-voltage switching diode encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • High reverse voltage VR ≤ 250 V • Low capacitance: Cd ≤ 2 pF

文件：201.31 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BAS21W；Package：SC-70；High-voltage switching diodes

Features * High switching speed: trr £ 50 ns * Low leakage current * High reverse voltage: VR £ 250 V * Low capacitance: Cd £ 2 pF * Very small SMD plastic package * AEC-Q101 qualified

文件：1.029099 Mbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BD46382；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：482.77 Kbytes 页数：16 Pages

ROHMRohm

罗姆罗姆半导体集团

型号：BD46382G；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：469.07 Kbytes 页数：4 Pages

ROHMRohm

罗姆罗姆半导体集团

型号：BD46382G；Package：SSOP5；Voltage Detector IC built in Delay Circuit

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in coun

文件：218.05 Kbytes 页数：6 Pages

ROHMRohm

罗姆罗姆半导体集团

型号：BZT52B68S；Package：SOD-323；200mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 200mW Power Dissipation 2.4V – 75V Nominal Zener Voltage 2 Standard Vz Tolerance Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

文件：102.11 Kbytes 页数：5 Pages

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

型号：BZX84C68-AU；Package：SOT-23；SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • AEC-Q10

文件：292.47 Kbytes 页数：6 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

型号：EMX4；Package：EMT6；High transition frequency (dual transistors)

Features 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.95pF)

文件：76.93 Kbytes 页数：4 Pages

ROHMRohm

罗姆罗姆半导体集团

型号：EMX4；Package：EMT6；High transition frequency (dual transistors)

Features 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.95pF)

文件：66.19 Kbytes 页数：2 Pages

ROHMRohm

罗姆罗姆半导体集团

型号：EMX4；Package：EMT6；Two 2SC3837K chips in a EMT or UMT or SMT package.

Features 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.95pF)

文件：89.2 Kbytes 页数：4 Pages

ROHMRohm

罗姆罗姆半导体集团