2N7002

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002

SOT-23Plastic-EncapsulateMOSFET

N-ChannelMOSFET Features ●MOSFET(N-Channel) ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability Applications ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002

N-ChannelSMDMOSFET

2N7002

N-ChannelEnhancementModeMOSFET

Feature ●60V/0.5A,RDS(ON)=7500mΩ(MAX)@VGS=10V.Id=0.5A RDS(ON)=7500mΩ(MAX)@VGS=4.5V.Id=0.2A ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOT-23forSurfaceMountPackage. Applications ●PowerManagementinDesktopC

2N7002

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

2N7002

N-ChannelEnhancementMOSFET

Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

2N7002

N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. Applications Intendedforuseingeneralpurposeswitchingandphasecontrolapplications.

2N7002

N-ChannelMOSFET

2N7002

TAS5612L-TAS5614LDDVEVM

2N7002

N-ChannelEnchanncement-ModeMosTransistor

N-CHANNELENCHANNCEMENT-MODEMOSTRANSISTOR Description ​​​​​​​SOT-23