5 Volt, Byte Alterable EEPR

5 Volt, Byte Alterable EEPROM The X28HC64 is an 8K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide mem

文件：396.89 Kbytes 页数：18 Pages

Intersil

丝印：X28HC64J-12ZCY；Package：32LdPLCC；64k, 8k x 8-Bit 5 Volt, Byte Alterable EEPROM

64k, 8k x 8-Bit 5 Volt, Byte Alterable EEPROM The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for b

文件：784.41 Kbytes 页数：18 Pages

RENESAS

瑞萨

5 Volt, Byte Alterable EEPROM

文件：363.74 Kbytes 页数：17 Pages

Intersil

Package：32-LCC（J 形引线）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC EEPROM 64KBIT 120NS 32PLCC

Renesas Electronics America Inc

Package：32-LCC（J 形引线）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：EEPROM 8K X 8 CMOS 120NS 32PLCC

Renesas Electronics America Inc