5 Volt, Byte Alterable EEPROM

5V, Byte Alterable EEPROM The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory Features • Access time: 70ns • Simple byte and pa

文件：286.89 Kbytes 页数：15 Pages

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256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing

文件：502.34 Kbytes 页数：19 Pages

INTERSIL

丝印：X28HC256J-15ZHY；Package：32LdPLCC；256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM

文件：873.01 Kbytes 页数：19 Pages

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5V, Byte Alterable EEPROM

文件：410.17 Kbytes 页数：20 Pages

INTERSIL

Package：32-LCC（J 形引线）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC EEPROM 256KBIT 150NS 32PLCC

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