X28HC256DI-12中文资料INTERSIL数据手册PDF规格书

5V, Byte Alterable EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory

特性 Features

• Access time: 70ns

• Simple byte and page write

- Single 5V supply

- No external high voltages or VP-P control circuits

- Self-timed

- No erase before write

- No complex programming algorithms

- No overerase problem

• Low power CMOS

- Active: 60mA

- Standby: 500µA

• Software data protection

- Protects data against system level inadvertent writes

• High speed page write capability

• Highly reliable Direct Write™ cell

- Endurance: 1,000,000 cycles

- Data retention: 100 years

• Early end of write detection

- DATA polling

- Toggle bit polling

• Pb-free plus anneal available (RoHS compliant)