P-Channel Enhancement Mode Power MOSFET

Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ■ V DS = -20V, lD = -4.1A RDS(ON)

文件：763.69 Kbytes 页数：7 Pages

WPMTEK

维攀科技

P-Channel Enhancement Mode MOSFET

Features AEC-Q101 Qualified Surface-mounted package

文件：1.61711 Mbytes 页数：7 Pages

HUIXIN

慧芯电子

N-Channel Enhancement Mode MOSFET

Features Low RDS Halogen and Antimony Free(HAF) RoHS compliant Application boost converters LED backlighting

文件：2.37612 Mbytes 页数：7 Pages

HUIXIN

慧芯电子

P-Channel Enhancement Mode MOSFET

Features -High speed switch -Advanced trench cell design -Halogen and Antimony Free(HAF) RoHS compliant

文件：1.78016 Mbytes 页数：7 Pages

HUIXIN

慧芯电子

NPN Epitaxial P lanar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

文件：430.02 Kbytes 页数：4 Pages

WEITRON

Wireless Charging Coils (Multi)

文件：2.73719 Mbytes 页数：3 Pages

BEL

Wireless Charging Coils (Multi)

文件：2.73719 Mbytes 页数：3 Pages

BEL

NPN EPITAXIAL PLANAR TRANSISTOR

文件：1.28647 Mbytes 页数：4 Pages

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NPN EPITAXIAL PLANAR TRANSISTOR

文件：955.14 Kbytes 页数：3 Pages

WEITRON

PNP EPITAXIAL PLANAR TRANSISTOR

文件：366.57 Kbytes 页数：3 Pages

WEITRON