GaN-on-SiC Transistor, 45 W, 28 V, DC - 6 GHz

The WST4300D is a gallium nitride (GaN) high electron mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density ·15 dB Small Signal Gain at 4 GHz\n·45 W PSAT\n·28 V Operation\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 6 GHz Operation\n·High Efficiency\n;

MACOM

Microcontroller Series for Industrial Applications

文件：1.68973 Mbytes 页数：102 Pages

INFINEON

英飞凌

Frequency Mixer

文件：281.1 Kbytes 页数：2 Pages

MINI

Frequency Mixer

文件：281.1 Kbytes 页数：2 Pages

MINI