2N7002

N-CHANNELTRANSISTOR

Description TheMTN7002N2isaN-channelenhancement-modeMOStransistor. Drain-SourseVoltageBVDSS60V Drain-GateVoltage(RGS=1M:)BVDSS60V Gate-SourceVoltageVGS+/-40V ContinuousDrainCurrent(Ta=25℃)ID200*1mA ContinuousDrainCurrent(Ta=100℃)ID115*1mA PulsedDrainCurre

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002

SMDSignalDMOSTransistor(N-Channel)

Features •VoltageControlledSmallSignalSwitch •HighDensityCellDesignforLowRDS(ON) •RuggedandReliable •HighSaturationCurrentCapablity •RoHSCompliance

2N7002

N-ChannelEnhancement-ModeVerticalDMOSFETs

2N7002

N-channel60V-1.8廓-0.35A-SOT23-3L/TO-92STripFET??PowerMOSFET

2N7002

SmallSignalMOSFET

SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–23

2N7002

TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET

Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications.

2N7002

N-ChannelMOSFET

2N7002

N-CHANNELMOSFET

PRODUCTSUMMARY SOT-23Plastic-EncapsulateTransistors FEATURES HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability

2N7002

N-ChannelMOSFET

Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability Drain-SourcevoltageVDS60V DrainCurrentID115mA PowerDissipationPD225mW